What is the difference between low-field sensitivity and high-field sensitivity?
Magnetic sensitivity refers to a sensor’s ability to detect changes in magnetic field strength. It is a critical characteristic for MR sensors, determining how effectively they can measure variations in magnetic fields.
What is a pole pitch?
Pole pitch is a crucial measurement that refers to the distance between adjacent magnetic poles on a magnetized surface or within a magnetic field. It affects the sensor’s ability to accurately detect and measure magnetic field variations.
What are the characteristics of magnetic field strength?
Field strength characteristics vary across weak, medium, and strong magnetic fields. Here are the relevant criteria for each:
How does a switching field equal a magnetic field at switching voltage?
In the context of magnetoresistive (MR) sensors, the specific magnetic field strength required to change the sensor's resistance state is known as the switching field. When this field is applied, the sensor alters its electrical resistance, which we detect as a change in voltage (switching voltage). Essentially, the switching field triggers the sensor to switch its resistance state, and the switching voltage indicates this change.
What is the purpose of an air gap in magnetic sensors?
Air gap in the context of MR sensors, is the distance between the sensor and the magnetic source. This gap has a critical impact on the sensor’s performance and accuracy. Proper management of the air gap enables consistent, reliable results.
What is wafer level packaging?
Wafer level packaging (WLP) integrates fabrication, packaging, testing and burn-in of hundreds or thousands of sensors on a thin slice of semiconductor material (called a wafer) before it is divided into individual sensors.
Key benefits:
Typical Applications:
How does an AMR sensor determine the angle of rotation of an object?
An AMR sensor detects the direction of the magnetic field to determine an object's angle of rotation. When a permanent magnet rotates, the sensor detects changes in resistance due to the anisotropic magnetoresistance effect. Using a Wheatstone bridge configuration, the sensor converts resistance changes into differential sine and cosine signals. A computer algorithm processes these signals to determine the precise angle of rotation. Proper calibration is essential to enable accurate angle measurements, involving corrections for errors in offset, amplitude, and orthogonality. AMR sensors can measure angles up to 180° with accuracy between 0.5° and 0.1°. However, by combining AMR sensing with Hall-effect latches, they can achieve angle measurements through 360°.
How do Wheatstone bridges improve the performance of AMR sensors?
AMR sensors typically employ resistive elements arranged in a Wheatstone bridge configuration to detect changes in resistance due to the anisotropic magnetoresistance effect. The bridge produces differential sine and cosine signals corresponding to the magnetic field direction. Computer algorithms process these signals to determine the precise position of the object. Multiple Wheatstone bridges are often employed to improve the accuracy and resolution of AMR sensors.
Functionality:
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What is homogenous field sensing?
Homogenous field sensing refers to the detection of magnetic fields that are uniform in strength and direction across area being sensed. Magnetoresistive sensors are intended to measure changes in magnetic fields accurately and consistently. There are cases where homogenous field sensing is critical and others in which it is not as important.
Critical applications for homogenous field sensing include:
MRI machine
In Magnetic Resonance Imaging (MRI) machines, a highly homogeneous magnetic field is crucial for producing clear and accurate images of the body's internal structures. Any inhomogeneity can lead to distortions and artifacts in the images.
Magnetic Navigation System
Magnetic Navigation Systems are used in aerospace and marine navigation. These systems rely on homogeneous magnetic fields to provide precise directional information. Variations in the magnetic field could lead to navigational errors.
Scientific Research
Experiments in physics and materials science often require homogeneous magnetic fields to confirm that the results are not influenced by field variations.
How does hysteresis impact the accuracy of MR sensors?
Hysteresis refers to the lag between the input and output in a system, particularly when the magnetic field changes direction. In MR sensors, hysteresis can impact sensor accuracy in several ways:
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Anisotropic magnetoresistive (AMR) and giant magnetoresistive (GMR) sensors both detect changes in magnetic fields by associated changes in thin film electrical resistance. They are also used in similar applications. However, there are differences in operating principles and key performance characteristics:
Detection Principle | |
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AMR sensors measure changes in electrical resistance due to the angle between the magnetization and the current direction in a ferromagnetic material. This effect occurs because the resistance varies with the direction of the magnetic field relative to the current flow. | GMR sensors rely on the change in resistance caused by the alignment of magnetizations in multilayered ferromagnetic structures separated by non-magnetic layers. When the magnetic layers are aligned parallel, the resistance is lower; when they are antiparallel, the resistance is higher. |
Sensitivity | |
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Generally, AMR sensors offer moderate sensitivity, making them suitable for applications where precise but not extremely high sensitivity is required. |
GMR sensors provide higher sensitivity compared to AMR sensors, allowing them to detect very small changes in magnetic fields. This makes them suitable for applications requiring high precision. |
Structure | |
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Typically, AMR sensors consist of a single layer of ferromagnetic material, such as permalloy (nickel-iron alloy). | GMR sensors are composed of multiple layers, including ferromagnetic layers, such as cobalt, and non-magnetic layers, such as copper. This multilayer structure is key to achieving the giant magnetoresistance effect. |
Performance Characteristics | |
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AMR sensors are known for their simplicity and cost-effectiveness, with a narrow detection range and a small hysteresis. | GMR sensors offer a wider detection range and higher reliability, though they may exhibit multiple switching points in the presence of strong permanent magnets. |
Anisotropic magnetoresistance (AMR) sensors and Hall effect sensors both detect magnetic fields but operate differently and have distinct characteristics:
Operating Principle | |
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AMR sensors detect changes in electrical resistance due to the angle between the magnetization and the current direction in a ferromagnetic material. | Hall effect sensors measure the voltage generated perpendicular to the current flow when exposed to a magnetic field. |
Sensitivity |
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AMR sensors generally offer higher sensitivity compared to Hall effect sensors, making them suitable for detecting minute changes in magnetic fields. |
Magnetic Field Orientation | |
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AMR sensors respond to magnetic fields parallel to the sensor. | Hall effect sensors respond to fields perpendicular to the sensor. |
Design Flexibility | |
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AMR sensors provide more design flexibility due to their ability to detect horizontal magnetic fields. | Hall effect sensors typically require the magnet to be placed directly above the sensor. |